| PART |
Description |
Maker |
| BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
|
Siemens Semiconductor Group
|
| AMMC-5620 AMMC-5620-W10 AMMC-5620-W50 |
Agilent AMMC-5620 6 - 20 GHz High Gain Amplifier
Agilent AMMC-5620 6 - 20 GHz High Gain Amplifier
AMMC-5620 · 6-20 GHz High Gain Amplifier
|
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| LD7213L LD7213 |
14 GHz / 300 W CW / CONDUCTION COOLING / HIGH POWER GAIN / FLAT GAIN VARIATION
14 GHz, 300 W CW, CONDUCTION COOLING, HIGH POWER GAIN, FLAT GAIN VARIATION
|
NEC Corp.
NEC[NEC]
|
| Q62702-G0042 BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SST12LF09-Q3CE |
2.4 GHz High-Gain, High-Efficiency Front-end Module
|
Microchip Technology
|
| HMMC-5620 |
6-20 GHz High-Gain Amplifier
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| RFMA7090-1W-Q7 |
7.0 - 9.0 GHz High Gain Surface-Mounted PA
|
Excelics Semiconductor, Inc.
|
| RFMA7090-0.5W-Q7 |
7.0 - 9.0 GHz High Gain Surface-Mounted PA
|
Excelics Semiconductor, Inc.
|
| RFMA1720-1W-Q7 |
17.7 - 19.7 GHz High-Gain Surface Mounted PA
|
Excelics Semiconductor, Inc.
|
| LD7260 |
6 GHz / 2.25 kW CW / PPM FOCUSING / HIGH POWER GAIN
6 GHz 2.25 kW CW PPM FOCUSING HIGH POWER GAIN
6 GHz, 2.25 kW CW, PPM FOCUSING, HIGH POWER GAIN
|
NEC[NEC]
|
| CGD1044HI |
1 GHz, 25 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
| HMC636ST89 HMC636ST89E |
GaAs PHEMT HIGH LINEARITY Gain Block, 0.2 - 4.0 GHz
|
Hittite Microwave Corporation
|
